Samsung Electronics begins shipping 12-layer HBM4E DRAM samples in Korea on May 29, 2026, targeting next-generation AI systems with higher bandwidth, capacity and energy efficiency.

Samsung Electronics said it began shipping the industry’s first 12-layer HBM4E samples to major global customers, following earlier mass production and commercial shipment of its HBM4 memory.

The company said HBM4E delivered a stable pin speed of 14Gbps, scalable up to 16Gbps, providing up to 3.6TB/s bandwidth per stack for large language models and AI systems.

Samsung stated the 12-layer HBM4E offered 48GB capacity, over 30% more than the previous generation, with plans for 32GB eight-layer and 64GB 16-layer variants based on customer needs.

The company said HBM4E used its 6th-generation 10nm-class DRAM process and a 4nm logic base die, and that design and process optimisations improved performance, power efficiency, yield and thermal characteristics.

Samsung said advanced low-power design and packaging improved energy efficiency by 16% and thermal resistance by more than 14%, and it planned to begin HBM4E mass production in line with customer schedules.