Fujifilm said it has developed a fluorine-free negative ArF immersion photoresist for advanced AI semiconductor manufacturing.

The company said on April 23, 2026, in Tokyo that it had begun customer sampling and sought commercialization after evaluations. Fujifilm stated that the resist used no fluorine-containing raw materials, including PFAS, and was designed for ArF immersion lithography at advanced nodes.

Fujifilm reported that standard ArF immersion photoresists usually contain PFAS for acid reactions and water repellency. The company said PFAS restrictions had advanced because of environmental concerns.

Fujifilm stated that removing fluorine compounds from raw materials improved wastewater handling and reduced treatment energy. The company said it planned to apply the technology to other photoresists, including EUV materials.